Invention Grant
US08987092B2 Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges
有权
用于制造具有半圆形顶表面和圆角顶角和边缘的鳍结构的存储单元的方法
- Patent Title: Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges
- Patent Title (中): 用于制造具有半圆形顶表面和圆角顶角和边缘的鳍结构的存储单元的方法
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Application No.: US12110974Application Date: 2008-04-28
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Publication No.: US08987092B2Publication Date: 2015-03-24
- Inventor: Inkuk Kang , Gang Xue , Shenqing Fang , Rinji Sugino , Yi Ma
- Applicant: Inkuk Kang , Gang Xue , Shenqing Fang , Rinji Sugino , Yi Ma
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/115 ; H01L29/66 ; H01L29/78
Abstract:
Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.
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