Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13917990Application Date: 2013-06-14
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Publication No.: US08987112B2Publication Date: 2015-03-24
- Inventor: Bo-Seok Oh
- Applicant: MagnaChip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2010-0036710 20100421
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/8234
Abstract:
A semiconductor device includes: a first well and a second well formed in a substrate and having a different impurity doping concentration; a first isolation layer and a second isolation layer formed in the first well and the second well, respectively, and having a different depth; and a third isolation layer formed in a boundary region in which the first well and the second well are in contact with each other, and having a combination type of the first isolation layer and the second isolation layer.
Public/Granted literature
- US20130344678A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-12-26
Information query
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