Group V doping of GaAs-based layers to improve radiation tolerance of solar cells

Invention Grant

US08987129B2 Group V doping of GaAs-based layers to improve radiation tolerance of solar cells 有权

Title translation: 第V族掺杂GaAs基层以提高太阳能电池的辐射耐受性

Please log in to see more content

Patent Title: Group V doping of GaAs-based layers to improve radiation tolerance of solar cells
Patent Title (中): 第V族掺杂GaAs基层以提高太阳能电池的辐射耐受性
Application No.: US13627481

Application Date: 2012-09-26
Publication No.: US08987129B2

Publication Date: 2015-03-24
Inventor: Joseph C. Boisvert , Christopher M. Fetzer
Applicant: Joseph C. Boisvert , Christopher M. Fetzer
Applicant Address: US IL Chicago
Assignee: The Boeing Company
Current Assignee: The Boeing Company
Current Assignee Address: US IL Chicago
Agency: Smith Moore Leatherwood LLP
Main IPC: H01L21/28
IPC: H01L21/28 ; H01L31/0687

Group V doping of GaAs-based layers to improve radiation tolerance of solar cells

Abstract:

Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.

Abstract(Chinese):

公开了用于改善照射的光伏电池的性能和寿命的方法，由此使用V族元素，优选氮气来掺杂半导体GaAs基亚细胞合金。

Public/Granted literature

US20140084146A1 GROUP V DOPING OF GaAs-BASED LAYERS TO IMPROVE RADIATION TOLERANCE OF SOLAR CELLS Public/Granted day:2014-03-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/28	....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的