Invention Grant
- Patent Title: Circuit structure and manufacturing method thereof
- Patent Title (中): 电路结构及其制造方法
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Application No.: US13615722Application Date: 2012-09-14
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Publication No.: US08987608B2Publication Date: 2015-03-24
- Inventor: Shang-Feng Huang , Cheng-Po Yu , Jen-Chi Cheng
- Applicant: Shang-Feng Huang , Cheng-Po Yu , Jen-Chi Cheng
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW101128625A 20120808
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K1/02 ; H05K3/46

Abstract:
A circuit structure includes an inner circuit layer, a first and a second dielectric layers, a first and a second conductive material layers, and a second and a third conductive layers. The first dielectric layer covers a first conductive layer of the inner circuit layer and has a first surface and first circuit grooves. The first conductive material layer is disposed inside the first circuit grooves. The second conductive layer is disposed on the first surface and includes a signal trace and at least two reference traces. The second dielectric layer covers the first surface and the second conductive layer and has a second surface and second circuit grooves. Widths of the first and the second circuit grooves are smaller than that of the reference traces. The second conductive material layer is disposed inside the second circuit grooves. The third conductive layer is disposed on the second surface.
Public/Granted literature
- US20140041919A1 CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-02-13
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