Invention Grant
US08990644B2 Apparatus and methods of programming memory cells using adjustable charge state level(s)
有权
使用可调电荷状态电平编程存储单元的装置和方法
- Patent Title: Apparatus and methods of programming memory cells using adjustable charge state level(s)
- Patent Title (中): 使用可调电荷状态电平编程存储单元的装置和方法
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Application No.: US13335291Application Date: 2011-12-22
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Publication No.: US08990644B2Publication Date: 2015-03-24
- Inventor: John L. Seabury , Bruce A. Liikanen
- Applicant: John L. Seabury , Bruce A. Liikanen
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Pritzkau Patent Group, LLC
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10
Abstract:
Apparatus and methods are disclosed, including a method of programming involving determining an error rate for the memory cells, and programming the memory cells using a charge state level for a charge state that is based at least in part on the determined error rate.
Public/Granted literature
- US20130166972A1 Apparatus and Methods of Programming Memory Cells using Adjustable Charge State Level(s) Public/Granted day:2013-06-27
Information query
