Invention Grant
US08995173B1 Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements
有权
具有动态存储元件和可编程阻抗阴影元件的存储单元，器件和方法
- Patent Title: Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements
- Patent Title (中): 具有动态存储元件和可编程阻抗阴影元件的存储单元，器件和方法
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Application No.: US13603373Application Date: 2012-09-04
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Publication No.: US08995173B1Publication Date: 2015-03-31
- Inventor: Narbeh Derhacobian
- Applicant: Narbeh Derhacobian
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technologies Corporation
- Current Assignee: Adesto Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C11/401
Abstract:
A memory device can include a plurality of memory cells, each including a dynamic section configured to store data dynamically, and a programmable impedance section comprising at least one programmable element programmable between at least two different data states, the programmable impedance section configured to establish a data value stored by the dynamic section in response to a recall signal.
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