Invention Grant
- Patent Title: Memory circuit with PMOS access transistors
- Patent Title (中): 具有PMOS存取晶体管的存储电路
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Application No.: US13350575Application Date: 2012-01-13
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Publication No.: US08995175B1Publication Date: 2015-03-31
- Inventor: Jun Liu , Irfan Rahim , Yanzhong Xu , Andy L. Lee
- Applicant: Jun Liu , Irfan Rahim , Yanzhong Xu , Andy L. Lee
- Applicant Address: US CA San Jose
- Assignee: Altera Corporation
- Current Assignee: Altera Corporation
- Current Assignee Address: US CA San Jose
- Agency: Mauriel Kapouytian Woods LLP
- Agent Ararat Kapouytian
- Main IPC: G11C11/412
- IPC: G11C11/412 ; G11C5/14
Abstract:
A memory circuit that includes a memory storage unit and access transistors coupled to the memory storage unit, where the access transistors include PMOS transistors, is described. In one implementation, the memory circuit further includes a bias clamp transistor coupled to the memory storage unit.
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