Invention Grant
- Patent Title: Adaptive operation of multi level cell memory
- Patent Title (中): 多级单元存储器的自适应操作
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Application No.: US13741221Application Date: 2013-01-14
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Publication No.: US08995184B2Publication Date: 2015-03-31
- Inventor: Ryan Chiezo Takafuji , Nian Niles Yang , Chris Nga Yee Avila
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C11/56 ; G11C16/04 ; G11C16/34
Abstract:
A Multi Level Cell (MLC) nonvolatile memory is tested and, if it fails to meet an MLC specification, is reconfigured for operation as an SLC memory by assigning two of the MLC memory cell states as SLC states in a first SLC mode, according to predefined sets of criteria. Subsequently, different MLC memory cell states are assigned as SLC states in a second SLC mode.
Public/Granted literature
- US20140160842A1 Adaptive Operation of Multi Level Cell Memory Public/Granted day:2014-06-12
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