Invention Grant
US08995200B1 Non-volatile memory (NVM) with dynamically adjusted reference current
有权
具有动态调整参考电流的非易失性存储器（NVM）
- Patent Title: Non-volatile memory (NVM) with dynamically adjusted reference current
- Patent Title (中): 具有动态调整参考电流的非易失性存储器（NVM）
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Application No.: US14033622Application Date: 2013-09-23
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Publication No.: US08995200B1Publication Date: 2015-03-31
- Inventor: Fuchen Mu , Chen He , Yanzhuo Wang
- Applicant: Fuchen Mu , Chen He , Yanzhuo Wang
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C7/08
Abstract:
A sense amplifier is configured to sense a current from a selected bit cell of a non-volatile memory array and compare the sensed current to a reference current to determine a logic state stored in the bit cell. A controller is configured to perform a program/erase operation on at least a portion of the memory array to change a logic state of at least one bit cell of the portion of the memory array; determine a number of program/erase pulses applied to the at least one bit cell during the program/erase operation to achieve the change in logic state; and when the number of program/erase pulses exceeds a pulse count threshold, adjust the reference current of the sense amplifier for a subsequent program/erase operation.
Public/Granted literature
- US20150085593A1 NON-VOLATILE MEMORY (NVM) WITH DYNAMICALLY ADJUSTED REFERENCE CURRENT Public/Granted day:2015-03-26
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