Invention Grant
- Patent Title: Methods and apparatus for temperature tuning of semiconductor lasers
- Patent Title (中): 半导体激光器温度调节方法和装置
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Application No.: US13715482Application Date: 2012-12-14
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Publication No.: US08995483B2Publication Date: 2015-03-31
- Inventor: Laurent Diehl , Christian Pfluegl , Mark F. Witinski
- Applicant: EOS Photonics, Inc.
- Applicant Address: US MA Cambridge
- Assignee: EOS Photonics, Inc.
- Current Assignee: EOS Photonics, Inc.
- Current Assignee Address: US MA Cambridge
- Agency: Cooley LLP
- Main IPC: H01S3/04
- IPC: H01S3/04 ; H01S5/06 ; H01S5/024 ; H01S5/12 ; H01S5/22 ; B82Y20/00 ; H01S5/00 ; H01S5/026 ; H01S5/0625 ; H01S5/34 ; H01S5/40

Abstract:
The present technology relates to a fast and efficient heating element based on a thick heterostructure which is monolithically integrated in close proximity to one or more components of a photonic or an electronic circuit. Inventive embodiments also relate to methods of use illustrative heating elements to control or tune the characteristics of the electronic or photonic component(s). Inventive embodiments may be particularly useful in the fast spectral tuning of the emission wavelength of single mode QCLs.
Public/Granted literature
- US20130156052A1 METHODS AND APPARATUS FOR TEMPERATURE TUNING OF SEMICONDUCTOR LASERS Public/Granted day:2013-06-20
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