Invention Grant
- Patent Title: Method for manufacturing interposer
- Patent Title (中): 内插制造方法
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Application No.: US13183782Application Date: 2011-07-15
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Publication No.: US08997344B2Publication Date: 2015-04-07
- Inventor: Hajime Sakamoto , Shuichi Kawano , Daiki Komatsu , Hiroshi Segawa
- Applicant: Hajime Sakamoto , Shuichi Kawano , Daiki Komatsu , Hiroshi Segawa
- Applicant Address: JP Ogaki-shi
- Assignee: Ibiden Co., Ltd.
- Current Assignee: Ibiden Co., Ltd.
- Current Assignee Address: JP Ogaki-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01K3/10
- IPC: H01K3/10 ; H01L21/48 ; H01L23/538 ; H01L23/00

Abstract:
A method for manufacturing an interposer including forming a first insulating layer comprising an inorganic material on a supporting substrate, forming a first wire in the first insulating layer, forming a second insulating layer on a first side of the first insulating layer, forming a second wire with a longer wire length and a greater thickness than the first wire on the second insulating layer, and removing the supporting substrate.
Public/Granted literature
- US20110265324A1 INTERPOSER AND METHOD FOR MANUFACTURING INTERPOSER Public/Granted day:2011-11-03
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