Invention Grant
- Patent Title: High impact resistant acceleration sensor
- Patent Title (中): 高抗冲击加速度传感器
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Application No.: US13253398Application Date: 2011-10-05
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Publication No.: US08997570B2Publication Date: 2015-04-07
- Inventor: Shinji Maekawa
- Applicant: Shinji Maekawa
- Applicant Address: JP Shinjuku-Ku
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Shinjuku-Ku
- Agency: Burr & Brown, PLLC
- Priority: JP2008-125674 20080513
- Main IPC: G01P15/12
- IPC: G01P15/12 ; G01P15/18 ; B81B3/00 ; G01P15/08

Abstract:
An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2). 2
Public/Granted literature
- US20120024065A1 ACCELERATION SENSOR Public/Granted day:2012-02-02
Information query
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