Invention Grant
- Patent Title: In-situ boron doped PDC element
- Patent Title (中): 原位硼掺杂PDC元素
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Application No.: US12968590Application Date: 2010-12-15
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Publication No.: US08997900B2Publication Date: 2015-04-07
- Inventor: Jiinjen Albert Sue , Harold Sreshta
- Applicant: Jiinjen Albert Sue , Harold Sreshta
- Applicant Address: US TX Houston
- Assignee: National Oilwell DHT, L.P.
- Current Assignee: National Oilwell DHT, L.P.
- Current Assignee Address: US TX Houston
- Agency: JL Salazar Law Firm
- Main IPC: E21B10/36
- IPC: E21B10/36 ; E21B10/567 ; E21B10/573
Abstract:
A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.
Public/Granted literature
- US20120152622A1 In-Situ Boron Doped PDC Element Public/Granted day:2012-06-21
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