Invention Grant
- Patent Title: Process for producing a nitride single crystal and apparatus therefor
- Patent Title (中): 氮化物单晶的制造方法及其装置
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Application No.: US12234786Application Date: 2008-09-22
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Publication No.: US08999059B2Publication Date: 2015-04-07
- Inventor: Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- Applicant: Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- Applicant Address: JP Nagoya JP Suita
- Assignee: NGK Insulators, Ltd.,Osaka University
- Current Assignee: NGK Insulators, Ltd.,Osaka University
- Current Assignee Address: JP Nagoya JP Suita
- Agency: Burr & Brown, PLLC
- Priority: JP2006-82044 20060324
- Main IPC: C30B9/12
- IPC: C30B9/12 ; C30B35/00 ; C30B9/00 ; C30B29/40
Abstract:
A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.
Public/Granted literature
- US20090078193A1 PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR Public/Granted day:2009-03-26
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