Invention Grant
- Patent Title: Substrate processing apparatus
- Patent Title (中): 基板加工装置
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Application No.: US14306718Application Date: 2014-06-17
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Publication No.: US08999102B2Publication Date: 2015-04-07
- Inventor: Hidenori Miyoshi , Shuji Azumo
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2010-203923 20100913
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; H01L21/28 ; H01L21/3205 ; H01L21/445 ; H01L21/768 ; H01L29/49 ; H01L29/51 ; H01L51/05 ; H01L29/16 ; H01L29/20 ; H01L29/22 ; H01L51/00
Abstract:
In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.
Public/Granted literature
- US20140290857A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2014-10-02
Information query
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