Invention Grant
- Patent Title: Method for forming anodized layer and mold production method
- Patent Title (中): 形成阳极氧化层的方法和模具生产方法
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Application No.: US13819547Application Date: 2011-08-22
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Publication No.: US08999133B2Publication Date: 2015-04-07
- Inventor: Akinobu Isurugi , Kiyoshi Minoura , Hidekazu Hayashi , Kenichiro Nakamatsu
- Applicant: Akinobu Isurugi , Kiyoshi Minoura , Hidekazu Hayashi , Kenichiro Nakamatsu
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2010-192843 20100830
- International Application: PCT/JP2011/068839 WO 20110822
- International Announcement: WO2012/029570 WO 20120308
- Main IPC: C25D11/24
- IPC: C25D11/24 ; C25F3/02 ; B29C33/42 ; B29C33/56 ; C25D11/02 ; C25D11/12

Abstract:
An anodized layer formation method includes: providing an aluminum film provided on a support or an aluminum base; and forming a porous alumina layer which has minute recessed portions by applying a voltage between an anode which is electrically coupled to a surface of the aluminum film or the aluminum base and a cathode which is provided in an electrolytic solution with the surface of the aluminum film or the aluminum base being in contact with the electrolytic solution. The forming of the porous alumina layer includes increasing the voltage to a target value and, before the voltage is increased to the target value, increasing the voltage to a first peak value which is lower than the target value and thereafter decreasing the voltage to a value which is lower than the first peak value. As such, an anodized layer with reduced variation of recessed portions can be formed.
Public/Granted literature
- US20130153537A1 METHOD FOR FORMING ANODIZED LAYER AND MOLD PRODUCTION METHOD Public/Granted day:2013-06-20
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