Invention Grant
US08999208B2 In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element
有权
In-Ga-Sn氧化物烧结体，靶，氧化物半导体膜和半导体元件
- Patent Title: In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element
- Patent Title (中): In-Ga-Sn氧化物烧结体，靶，氧化物半导体膜和半导体元件
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Application No.: US13580355Application Date: 2011-02-22
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Publication No.: US08999208B2Publication Date: 2015-04-07
- Inventor: Masayuki Itose , Mami Nishimura , Masashi Kasami , Koki Yano
- Applicant: Masayuki Itose , Mami Nishimura , Masashi Kasami , Koki Yano
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2010-038979 20100224
- International Application: PCT/JP2011/000972 WO 20110222
- International Announcement: WO2011/105047 WO 20110901
- Main IPC: H01B1/02
- IPC: H01B1/02 ; C04B35/01 ; C04B35/457 ; C04B35/626 ; C04B37/02 ; C23C14/08 ; C23C14/34 ; H01L29/786 ; H01L29/66 ; H01L21/02
Abstract:
An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10≦In/(In+Ga+Sn)≦0.60 (1) 0.10≦Ga/(In+Ga+Sn)≦0.55 (2) 0.0001
Public/Granted literature
- US20120313057A1 In-Ga-Sn OXIDE SINTER, TARGET, OXIDE SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT Public/Granted day:2012-12-13
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