Invention Grant
- Patent Title: Scintillator single crystal, heat treatment method for production of scintillator single crystal, and method for production of scintillator single crystal
- Patent Title (中): 闪烁体单晶,闪烁体单晶的热处理方法及闪烁体单晶的制造方法
-
Application No.: US12130179Application Date: 2008-05-30
-
Publication No.: US08999281B2Publication Date: 2015-04-07
- Inventor: Yasushi Kurata , Naoaki Shimura , Tatsuya Usui
- Applicant: Yasushi Kurata , Naoaki Shimura , Tatsuya Usui
- Applicant Address: JP Tokyo
- Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JPP2007-146794 20070601; JPP2008-003581 20080110
- Main IPC: C01F17/00
- IPC: C01F17/00 ; C30B29/22 ; C30B15/00 ; C30B33/02 ; C09K11/77

Abstract:
The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following general formula (1). The scintillator single crystal of the invention exhibits improved scintillation properties by reduced segregation between elements in the crystal ingot. Lm2−(x+y+z)LnxLuyCezSiO5 (1) (Wherein Lm represents at least one element selected from among Sc and Y and lanthanoid elements with lower atomic numbers than Lu, Ln represents at least one element selected from among Sc, Y, B, Al, Ga and In and lanthanoid elements with ion radii intermediate between Lm and Lu, x represents a value of greater than zero and no greater than 0.5, y represents a value of greater than 1 and less than 2, and z represents a value of greater than zero and no greater than 0.1.).
Public/Granted literature
Information query
IPC分类: