Invention Grant
- Patent Title: Component of substrate processing apparatus and method for forming a film thereon
- Patent Title (中): 基板处理装置的部件及其上形成膜的方法
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Application No.: US12355210Application Date: 2009-01-16
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Publication No.: US08999475B2Publication Date: 2015-04-07
- Inventor: Koji Mitsuhashi
- Applicant: Koji Mitsuhashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell,Figg, Ernst & Manbeck, P.C.
- Priority: JP2008-011372 20080122
- Main IPC: B32B3/02
- IPC: B32B3/02 ; C25D5/00 ; H01L21/31 ; C25D21/02 ; C25D11/24 ; C25D11/00
Abstract:
A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.
Public/Granted literature
- US20090186184A1 COMPONENT OF SUBSTRATE PROCESSING APPARATUS AND METHOD FOR FORMING A FILM THEREON Public/Granted day:2009-07-23
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