Invention Grant
- Patent Title: Photosensitive sacrificial polymer with low residue
- Patent Title (中): 低残留的光敏牺牲聚合物
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Application No.: US14250455Application Date: 2014-04-11
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Publication No.: US08999629B2Publication Date: 2015-04-07
- Inventor: Paul Kohl , Yu-Chun Chen
- Applicant: Georgia Tech Research Corporation
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agent Balaram Gupta
- Main IPC: G03F7/095
- IPC: G03F7/095 ; G03F7/004 ; G03F7/039 ; G03F7/16 ; G03F7/36 ; G03F7/38 ; G03F7/40 ; B81C1/00 ; H01L21/768
Abstract:
Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.
Public/Granted literature
- US20140272708A1 PHOTOSENSITIVE SACRIFICIAL POLYMER WITH LOW RESIDUE Public/Granted day:2014-09-18
Information query
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