Invention Grant
US08999630B2 Patterning process and resist composition 有权
图案化过程和抗蚀剂组成

Patterning process and resist composition
Abstract:
An image is formed via positive/negative reversal on organic solvent development using a photoresist film comprising a polymer comprising recurring units of isosorbide (meth)acrylate in which one hydroxyl group of isosorbide is bonded to form (meth)acrylate and the other hydroxyl group is substituted with an acid labile group and an acid generator. The resist film is characterized by a high dissolution contrast between the unexposed and exposed regions. The photoresist film is exposed to radiation and developed in an organic solvent to form a fine hole pattern with good size control and high sensitivity.
Public/Granted literature
Information query
Patent Agency Ranking
0/0