Invention Grant
- Patent Title: Method of forming RRAM structure
- Patent Title (中): 形成RRAM结构的方法
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Application No.: US14525228Application Date: 2014-10-28
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Publication No.: US08999733B2Publication Date: 2015-04-07
- Inventor: Chun-I Hsieh , Chang-Rong Wu , Neng-Tai Shih
- Applicant: Nanya Technology Corp.
- Applicant Address: TW Gueishan Dist., Taoyuan
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Gueishan Dist., Taoyuan
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L45/00
Abstract:
An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.
Public/Granted literature
- US20150044852A1 METHOD OF FORMING RRAM STRUCTURE Public/Granted day:2015-02-12
Information query
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