Invention Grant
- Patent Title: Avalanche photodiodes and methods of fabricating the same
- Patent Title (中): 雪崩光电二极管及其制造方法
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Application No.: US14220431Application Date: 2014-03-20
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Publication No.: US08999744B2Publication Date: 2015-04-07
- Inventor: Mi-Ran Park , O-Kyun Kwon
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2010-0108685 20101103
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/02 ; H01L31/18 ; H01L31/0216
Abstract:
Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
Public/Granted literature
- US20140206130A1 AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-07-24
Information query
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