Invention Grant
- Patent Title: Phase-change memory device and fabrication method thereof
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US13845825Application Date: 2013-03-18
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Publication No.: US08999745B2Publication Date: 2015-04-07
- Inventor: Il Yong Lee
- Applicant: SK Hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0147439 20121217
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/24 ; H01L45/00
Abstract:
A phase-change memory device and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate in which a word line is arranged, a diode line disposed over the word line and extending parallel to the word line, a phase-change line pattern disposed over the diode line, and a projection disposed between the diode line and the phase-change line pattern and protruding from the diode line. The diode line and the projection are formed of a single layer to be in continuity with each other.
Public/Granted literature
- US20140166964A1 PHASE-CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2014-06-19
Information query
IPC分类:
