Invention Grant
US08999746B2 Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
有权
形成金属硫族化物分散体的方法，金属硫族化物分散体，太阳能电池的光吸收层的制造方法，太阳能电池的制造方法
- Patent Title: Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
- Patent Title (中): 形成金属硫族化物分散体的方法，金属硫族化物分散体，太阳能电池的光吸收层的制造方法，太阳能电池的制造方法
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Application No.: US13962631Application Date: 2013-08-08
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Publication No.: US08999746B2Publication Date: 2015-04-07
- Inventor: Atsushi Yamanouchi , Koichi Misumi , Akimasa Nakamura
- Applicant: Tokyo Ohka Kogyo Co., Ltd.
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L31/0749 ; H01L31/032 ; H01L31/0272 ; H01L31/18 ; H01L31/0256
Abstract:
A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R1 to R4 each independently represents an alkyl group, an aryl group or a hydrogen atom; provided that at least one of R1 to R4 represents a hydrocarbon group).
Public/Granted literature
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