Invention Grant
- Patent Title: Method for manufacturing organic semiconductor element, and organic semiconductor element
- Patent Title (中): 制造有机半导体元件和有机半导体元件的方法
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Application No.: US14110643Application Date: 2012-04-11
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Publication No.: US08999749B2Publication Date: 2015-04-07
- Inventor: Shin-ya Fujimoto , Ken Tomino
- Applicant: Shin-ya Fujimoto , Ken Tomino
- Applicant Address: JP Tokyo-to
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo-to
- Agency: Ladas & Parry LLP
- Priority: JP2011-087642 20110411
- International Application: PCT/JP2012/059928 WO 20120411
- International Announcement: WO2012/141224 WO 20121018
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L51/00 ; H01L51/10 ; H01L51/05

Abstract:
A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.
Public/Granted literature
- US20140027752A1 METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR ELEMENT, AND ORGANIC SEMICONDUCTOR ELEMENT Public/Granted day:2014-01-30
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