Invention Grant
- Patent Title: Method for making oxide semiconductor device
- Patent Title (中): 制造氧化物半导体器件的方法
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Application No.: US14182726Application Date: 2014-02-18
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Publication No.: US08999751B2Publication Date: 2015-04-07
- Inventor: Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-235604 20091009
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/16 ; H01L29/66 ; H01L29/417 ; H01L29/423 ; H01L29/786

Abstract:
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.
Public/Granted literature
- US20140162402A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-06-12
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