Invention Grant
- Patent Title: Method and apparatus for semiconductor device fabrication using a reconstituted wafer
- Patent Title (中): 使用重构晶片制造半导体器件的方法和装置
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Application No.: US14286527Application Date: 2014-05-23
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Publication No.: US08999756B2Publication Date: 2015-04-07
- Inventor: Hans-Joachim Barth , Matthias Hierlemann
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31 ; H01L21/683 ; H01L23/13 ; H01L23/538 ; H01L23/00 ; H01L25/065 ; H01L23/498
Abstract:
Method and apparatus for semiconductor device fabrication using a reconstituted wafer is described. In one embodiment, diced semiconductor chips are placed within openings on a frame. A reconstituted wafer is formed by filling a mold compound into the openings. The mold compound is formed around the chips. Finished dies are formed within the reconstituted wafer. The finished dies are separated from the frame.
Public/Granted literature
- US20140335654A1 Method and Apparatus for Semiconductor Device Fabrication Using a Reconstituted Wafer Public/Granted day:2014-11-13
Information query
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