Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14282895Application Date: 2014-05-20
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Publication No.: US08999761B2Publication Date: 2015-04-07
- Inventor: Hiroshi Fujii , Shigeki Tanaka , Kazuaki Yoshida
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2013-111360 20130527
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L23/495

Abstract:
To stably remove a resin body formed in a supply route of a resin in a sealing step. A leadframe has, in a sub-runner portion thereof, a sub-through-hole. The sub-through-hole has, along a first direction along which the sub-runner portion extends, a first portion located on the side of a main-runner portion and a second portion located on the side of a gate portion relative to the first portion. In a plan view, an opening width of the sub-through-hole in the first direction is greater than that of the sub-through-hole in a second direction perpendicular to the first direction. In a plan view, an opening width of the sub-through-hole in the second direction gradually decreases from the first portion to an end portion of the second portion on the side of the gate portion.
Public/Granted literature
- US20140349447A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-11-27
Information query
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