Invention Grant
- Patent Title: Compound semiconductor device and method of manufacturing the same
- Patent Title (中): 化合物半导体器件及其制造方法
-
Application No.: US14521978Application Date: 2014-10-23
-
Publication No.: US08999772B2Publication Date: 2015-04-07
- Inventor: Masahito Kanamura , Kozo Makiyama
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L21/263 ; H01L21/322 ; H01L29/66
Abstract:
Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output.
Public/Granted literature
- US20150044825A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-02-12
Information query
IPC分类:
