Invention Grant
- Patent Title: Method of conducting a direction-specific trimming process for contact patterning
- Patent Title (中): 进行接触图案化的方向特定修整工艺的方法
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Application No.: US13803350Application Date: 2013-03-14
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Publication No.: US08999777B2Publication Date: 2015-04-07
- Inventor: Ming Chyi Liu , Shih-Chang Liu , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/28
Abstract:
The present disclosure discloses a method of fabricating a semiconductor device. A first layer is formed over a substrate. A patterned second layer is then formed over the first layer. The patterned second layer includes an opening. A spacer material is then deposited in the opening, thereby reducing the opening in a plurality of directions. A direction-specific trimming process is performed to the spacer material and the second layer. Thereafter, the first layer is patterned with the second layer.
Public/Granted literature
- US20140273424A1 Method of Conducting a Direction-Specific Trimming Process for Contact Patterning Public/Granted day:2014-09-18
Information query
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