Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof

Invention Grant

US08999778B2 Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof 有权

Title translation: 在高温下提供柔性半导体器件的方法及其柔性半导体器件

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Patent Title: Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
Patent Title (中): 在高温下提供柔性半导体器件的方法及其柔性半导体器件
Application No.: US13298451

Application Date: 2011-11-17
Publication No.: US08999778B2

Publication Date: 2015-04-07
Inventor: Shawn O'Rourke , Curtis Moyer , Scott Ageno , Dirk Bottesch , Barry O'Brien , Michael Marrs
Applicant: Shawn O'Rourke , Curtis Moyer , Scott Ageno , Dirk Bottesch , Barry O'Brien , Michael Marrs
Applicant Address: US AZ Scottsdale
Assignee: Arizona Board of Regents
Current Assignee: Arizona Board of Regents
Current Assignee Address: US AZ Scottsdale
Agency: Bryan Cave LLP
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L21/683 ; H01L29/66 ; H01L29/786

Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof

Abstract:

Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180° C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.

Abstract(Chinese):

一些实施例包括提供半导体器件的方法。该方法可以包括：（a）提供柔性基底; （b）在所述柔性基底上沉积至少一层材料，其中所述至少一层材料在柔性基底上的沉积在至少180℃的温度下发生; 和（c）在金属层和a-Si层之间提供扩散阻挡层。在本申请中公开了其它实施例。

Public/Granted literature

US20120061672A1 METHOD OF PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AT HIGH TEMPERATURES AND FLEXIBLE SEMICONDUCTOR DEVICE THEREOF Public/Granted day:2012-03-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体