Invention Grant
- Patent Title: Methods of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13602104Application Date: 2012-09-01
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Publication No.: US08999784B2Publication Date: 2015-04-07
- Inventor: Sang Tae Ahn
- Applicant: Sang Tae Ahn
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0138198 20111220
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/336 ; H01L29/792 ; H01L29/66 ; H01L21/28 ; B82Y10/00 ; B82Y40/00 ; H01L29/423 ; H01L27/115 ; H01L29/06
Abstract:
A method of manufacturing a semiconductor device includes forming first auxiliary patterns, alternately forming first material layers and second material layers on the sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled, removing the second material layers, and forming charge storage layers in respective regions from which the second material layers have been removed.
Public/Granted literature
- US20130157453A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-06-20
Information query
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