Invention Grant
US08999788B2 Manufacturing method of GaN-based semiconductor device and semiconductor device
有权
GaN半导体器件和半导体器件的制造方法
- Patent Title: Manufacturing method of GaN-based semiconductor device and semiconductor device
- Patent Title (中): GaN半导体器件和半导体器件的制造方法
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Application No.: US13950079Application Date: 2013-07-24
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Publication No.: US08999788B2Publication Date: 2015-04-07
- Inventor: Hiroshi Kambayashi , Akinobu Teramoto , Tadahiro Ohmi
- Applicant: Tohoku University , Furukawa Electric Co., Ltd.
- Applicant Address: JP Miyagi JP Tokyo
- Assignee: Tohoku University,Furukawa Electric Co., Ltd.
- Current Assignee: Tohoku University,Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Miyagi JP Tokyo
- Agency: Lowe Hauptman & Ham, LLP
- Priority: JP2011-013425 20110125
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/306 ; H01L29/66 ; H01L29/778 ; H01L21/02 ; H01L29/78 ; H01L29/20 ; H01L29/423 ; H01L29/51
Abstract:
Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.
Public/Granted literature
- US20130307063A1 MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2013-11-21
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