Invention Grant
- Patent Title: Super-junction trench MOSFETs with short terminations
- Patent Title (中): 具有短端接的超结沟槽MOSFET
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Application No.: US14516704Application Date: 2014-10-17
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Publication No.: US08999789B2Publication Date: 2015-04-07
- Inventor: Fu-Yuan Hsieh
- Applicant: Force Mos Technology Co., Ltd.
- Applicant Address: TW New Taipei
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L21/336 ; H01L29/66
Abstract:
A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough.
Public/Granted literature
- US20150037954A1 SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS Public/Granted day:2015-02-05
Information query
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