Embodiments of present invention provide a method of forming silicide contacts of transistors. The method includes forming a first set of epitaxial source/drain regions of a first set of transistors; forming a sacrificial epitaxial layer on top of the first set of epitaxial source/drain regions; forming a second set of epitaxial source/drain regions of a second set of transistors; converting a top portion of the second set of epitaxial source/drain regions into a metal silicide and the sacrificial epitaxial layer into a sacrificial silicide layer in a silicidation process wherein the first set of epitaxial source/drain regions underneath the sacrificial epitaxial layer is not affected by the silicidation process; removing selectively the sacrificial silicide layer; and converting a top portion of the first set of epitaxial source/drain regions into another metal silicide.