Invention Grant
US08999802B2 Method for manufacturing semiconductor device by selectively removing end portions of gate dielectric layer and then filling end portions with dielectric layer
有权
通过选择性地去除栅极电介质层的端部然后用电介质层填充端部来制造半导体器件的方法
- Patent Title: Method for manufacturing semiconductor device by selectively removing end portions of gate dielectric layer and then filling end portions with dielectric layer
- Patent Title (中): 通过选择性地去除栅极电介质层的端部然后用电介质层填充端部来制造半导体器件的方法
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Application No.: US13813554Application Date: 2012-07-30
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Publication No.: US08999802B2Publication Date: 2015-04-07
- Inventor: Yunfei Liu , Haizhou Yin
- Applicant: Yunfei Liu , Haizhou Yin
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201210249429 20120718
- International Application: PCT/CN2012/079348 WO 20120730
- International Announcement: WO2014/012271 WO 20140123
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L21/31 ; H01L21/469 ; H01L29/66 ; H01L21/265 ; H01L21/28 ; H01L29/78
Abstract:
A method for manufacturing a semiconductor device is disclosed. In one embodiment, the method comprises: forming a gate stack on a substrate, wherein the gate stack comprises a gate dielectric layer and a gate conductor layer; selectively etching end portions of the gate dielectric layer to form gaps; and filling a material for the gate dielectric layer into the gaps.
Public/Granted literature
- US20140087538A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-03-27
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