A method for fabricating an integrated circuit includes forming a first gate electrode structure above a first active region and a second gate electrode structure above a second active region, forming a sacrificial spacer on sidewalls of the first and second gate electrode structures, and forming deep drain and source regions selectively in the first and second active regions by using the sacrificial spacer as an implantation mask. The method further includes forming drain and source extension and halo regions in the first and second active regions after removal of the sacrificial spacer and forming a fluorine implant region in the halo region of the first active region before or after formation of the drain and source extension and halo regions.