Invention Grant
- Patent Title: Semiconductor device fabricating method
- Patent Title (中): 半导体器件制造方法
-
Application No.: US14251086Application Date: 2014-04-11
-
Publication No.: US08999814B2Publication Date: 2015-04-07
- Inventor: Takashi Shiigi
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kawasaki-Shi
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2013-086324 20130417
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L23/00 ; H01L21/66 ; H01L27/02 ; H01L23/31 ; H01L21/56

Abstract:
A semiconductor device fabricating method includes forming device chip regions and a monitor chip region for processing management, on a substrate surface layer on one main surface side of a semiconductor substrate wafer, each device chip region having an active region and an edge region; after forming metal films on front surface of the device chip regions and the monitor chip region by vapor deposition and photolithography, forming protective films on the front surfaces of the device chip regions and monitor chip region; and grinding and polishing another main surface side of the semiconductor substrate wafer to thin the semiconductor substrate wafer. A difference between an area of one chip occupied by the protective film of the monitor chip region and an area of one chip occupied by the protective film of the device chip region is 20% or less.
Public/Granted literature
- US20140315352A1 SEMICONDUCTOR DEVICE FABRICATING METHOD Public/Granted day:2014-10-23
Information query
IPC分类: