Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12342153Application Date: 2008-12-23
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Publication No.: US08999818B2Publication Date: 2015-04-07
- Inventor: Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Hiroki Adachi , Shunpei Yamazaki
- Applicant: Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Hiroki Adachi , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-340013 20071228
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146 ; H01L27/12
Abstract:
A semiconductor element is formed on a first surface of the substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. A step is formed on the side surface of the substrate. The width of the upper section of the substrate with a step is narrower than the lower section of the substrate with a step. Therefore, the substrate can also be a protrusion.
Public/Granted literature
- US20090174023A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-07-09
Information query
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