Invention Grant
US08999822B2 Method for creating semiconductor junctions with reduced contact resistance
有权
用于产生具有降低的接触电阻的半导体结的方法
- Patent Title: Method for creating semiconductor junctions with reduced contact resistance
- Patent Title (中): 用于产生具有降低的接触电阻的半导体结的方法
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Application No.: US14531360Application Date: 2014-11-03
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Publication No.: US08999822B2Publication Date: 2015-04-07
- Inventor: Clinton T. Ballinger , Susanthri Perera , Adam Z. Peng
- Applicant: Evident Technologies
- Applicant Address: US NY Troy
- Assignee: Evident Technologies
- Current Assignee: Evident Technologies
- Current Assignee Address: US NY Troy
- Agency: Hoffman Warnick LLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/18 ; H01L21/28 ; H01L21/324

Abstract:
Embodiments of the invention relate generally to creating semiconductor junctions with reduced contact resistance. In one embodiment, the invention provides a method of forming a composition of material, the method comprising: providing at least two populations of semiconducting materials; layering the at least two populations of semiconducting materials to form at least two layers; and consolidating the at least two populations of semiconducting materials, wherein the consolidating creates an electrical connection between the at least two layers.
Public/Granted literature
- US20150056789A1 Method for Creating Semiconductor Junctions with Reduced Contact Resistance Public/Granted day:2015-02-26
Information query
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