Invention Grant
US08999828B2 Method and device for a split-gate flash memory with an extended word gate below a channel region
有权
具有在通道区域下方的扩展字门的分闸式闪存的方法和装置
- Patent Title: Method and device for a split-gate flash memory with an extended word gate below a channel region
- Patent Title (中): 具有在通道区域下方的扩展字门的分闸式闪存的方法和装置
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Application No.: US13197367Application Date: 2011-08-03
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Publication No.: US08999828B2Publication Date: 2015-04-07
- Inventor: Eng Huat Toh , Shyue Seng (Jason) Tan
- Applicant: Eng Huat Toh , Shyue Seng (Jason) Tan
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/792
Abstract:
A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with the word gate extending there through. Another embodiment includes forming a buried channel with the word gate extending below the buried channel.
Public/Granted literature
- US20130032869A1 SPLIT-GATE FLASH MEMORY WITH IMPROVED PROGRAM EFFICIENCY Public/Granted day:2013-02-07
Information query
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