Invention Grant
- Patent Title: Sidewall-free CESL for enlarging ILD gap-fill window
- Patent Title (中): 无侧壁CESL用于扩大ILD间隙填充窗口
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Application No.: US14185547Application Date: 2014-02-20
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Publication No.: US08999834B2Publication Date: 2015-04-07
- Inventor: Han-Pin Chung , Bor Chiuan Hsieh , Shiang-Bau Wang , Hun-Jan Tao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/28 ; H01L21/768 ; H01L21/8234 ; H01L23/485 ; H01L29/66 ; H01L27/088
Abstract:
An integrated circuit structure includes a first gate strip; a gate spacer on a sidewall of the first gate strip; and a contact etch stop layer (CESL) having a bottom portion lower than a top surface of the gate spacer, wherein a portion of a sidewall of the gate spacer has no CESL formed thereon.
Public/Granted literature
- US20140170846A1 SIDEWALL-FREE CESL FOR ENLARGING ILD GAP-FILL WINDOW Public/Granted day:2014-06-19
Information query
IPC分类:
