Invention Grant
US08999835B2 Method and structure of monolithically integrated ESD supperssion device 有权
单片集成ESD保护装置的方法和结构

Method and structure of monolithically integrated ESD supperssion device
Abstract:
A method of fabricating ESD suppression device includes forming conductive pillars dispersed in a dielectric material. The gaps formed between each pillar in the device behave like spark gaps when a high voltage ESD pulse occurs. When the voltage of the pulse reaches the “trigger voltage” these gaps spark over, creating a very low resistance path. In normal operation, the leakage current and the capacitance is very low, due to the physical gaps between the conductive pillars. The proposed method for fabricating an ESD suppression device includes micromachining techniques to be on-chip with device ICs.
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