Invention Grant
- Patent Title: Method and structure of monolithically integrated ESD supperssion device
- Patent Title (中): 单片集成ESD保护装置的方法和结构
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Application No.: US13410273Application Date: 2012-03-01
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Publication No.: US08999835B2Publication Date: 2015-04-07
- Inventor: Xiao (Charles) Yang
- Applicant: Xiao (Charles) Yang
- Applicant Address: US CA San Jose
- Assignee: mCube Inc.
- Current Assignee: mCube Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/60 ; H01L23/00

Abstract:
A method of fabricating ESD suppression device includes forming conductive pillars dispersed in a dielectric material. The gaps formed between each pillar in the device behave like spark gaps when a high voltage ESD pulse occurs. When the voltage of the pulse reaches the “trigger voltage” these gaps spark over, creating a very low resistance path. In normal operation, the leakage current and the capacitance is very low, due to the physical gaps between the conductive pillars. The proposed method for fabricating an ESD suppression device includes micromachining techniques to be on-chip with device ICs.
Public/Granted literature
- US20130065387A1 METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED ESD SUPPERSSION DEVICE Public/Granted day:2013-03-14
Information query
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