Invention Grant
- Patent Title: Semiconductor structure having an air-gap region and a method of manufacturing the same
- Patent Title (中): 具有气隙区域的半导体结构及其制造方法
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Application No.: US13895005Application Date: 2013-05-15
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Publication No.: US08999839B2Publication Date: 2015-04-07
- Inventor: Shu-Hui Su , Cheng-Lin Huang , Jiing-Feng Yang , Zhen-Cheng Wu , Ren-Guei Wu , Dian-Hau Chen , Yuh-Jier Mii
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/02 ; H01L21/768 ; H01L23/522 ; H01L23/532
Abstract:
A method of manufacturing a semiconductor structure, the method includes removing a portion of a dielectric filler from a first metal-containing layer formed over a semiconductor substrate to define an air-gap region according to a predetermined air-gap pattern. The method further includes filling the air-gap region with a decomposable filler and forming a dielectric capping layer over the first metal-containing layer. The method further includes decomposing the decomposable filler.
Public/Granted literature
- US20130252144A1 SEMICONDUCTOR STRUCTURE HAVING AN AIR-GAP REGION AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-09-26
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