Invention Grant
- Patent Title: Interconnect structure for semiconductor devices
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Application No.: US14336330Application Date: 2014-07-21
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Publication No.: US08999842B2Publication Date: 2015-04-07
- Inventor: Hui-Lin Chang , Hung Chun Tsai , Yung-Cheng Lu , Syun-Ming Jang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/3205 ; H01L21/285
Abstract:
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface, or is planar. The conductive material is silicided to form an alloy layer. The alloy layer comprises the first material and a second material of germanium, arsenic, tungsten, or gallium.
Public/Granted literature
- US20150017800A1 Interconnect Structure for Semiconductor Devices Public/Granted day:2015-01-15
Information query
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