Methods for formation of substrate elements

Invention Grant

US08999851B2 Methods for formation of substrate elements 有权

Title translation: 形成基质元素的方法

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Patent Title: Methods for formation of substrate elements
Patent Title (中): 形成基质元素的方法
Application No.: US12331150

Application Date: 2008-12-09
Publication No.: US08999851B2

Publication Date: 2015-04-07
Inventor: Francisco Leon , Francesco Lemmi , Jeffrey Miller , David Dutton , David P. Stumbo
Applicant: Francisco Leon , Francesco Lemmi , Jeffrey Miller , David Dutton , David P. Stumbo
Applicant Address: US CA Palo Alto
Assignee: OneD Material LLC
Current Assignee: OneD Material LLC
Current Assignee Address: US CA Palo Alto
Agency: Sterne, Kessler, Goldstein & Fox PLLC
Main IPC: H01L21/302
IPC: H01L21/302 ; H01L29/06 ; B81C1/00 ; B82Y10/00 ; H01L29/66 ; H01L29/786

Methods for formation of substrate elements

Abstract:

The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.

Abstract(Chinese):

本发明涉及形成衬底元件的方法，包括诸如纳米线，晶体管和其它结构的半导体元件，以及由这些方法形成的元件。

Public/Granted literature

US20090230380A1 Methods for Formation of Substrate Elements Public/Granted day:2009-09-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割