Invention Grant
- Patent Title: Method for manufacturing silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件的制造方法
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Application No.: US13658583Application Date: 2012-10-23
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Publication No.: US08999854B2Publication Date: 2015-04-07
- Inventor: Takeyoshi Masuda , Tomoaki Hatayama
- Applicant: Sumitomo Electric Industries, Ltd. , National University Corporation Nara Institute of Science and Technology
- Applicant Address: JP Osaka-shi JP Ikoma-shi
- Assignee: Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- Current Assignee: Sumitomo Electric Industries, Ltd.,National University Corporation Nara Institute of Science and Technology
- Current Assignee Address: JP Osaka-shi JP Ikoma-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JP2011-253614 20111121
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L29/861 ; H01L29/78 ; H01L29/06 ; H01L29/868 ; H01L29/739 ; H01L21/308 ; H01L21/3065 ; H01L29/12 ; H01L21/02 ; H01L29/16
Abstract:
On a substrate, a silicon carbide layer provided with a main surface is formed. A mask is formed to cover a portion of the main surface of the silicon carbide layer. The main surface of the silicon carbide layer on which the mask is formed is thermally etched using chlorine-based gas so as to provide the silicon carbide layer with a side surface inclined relative to the main surface. The step of thermally etching is performed in an atmosphere in which the chlorine-based gas has a partial pressure of 50% or smaller.
Public/Granted literature
- US20130130482A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2013-05-23
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