Invention Grant
- Patent Title: Substrate processing apparatus and method of manufacturing semiconductor device
- Patent Title (中): 基板处理装置及半导体装置的制造方法
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Application No.: US13727193Application Date: 2012-12-26
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Publication No.: US08999858B2Publication Date: 2015-04-07
- Inventor: Yasunobu Koshi , Kenichi Suzaki , Akihito Yoshino
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan LLC
- Priority: JP2011-285391 20111227
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/24 ; C23C16/44
Abstract:
The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.
Public/Granted literature
- US20130164943A1 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device Public/Granted day:2013-06-27
Information query
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