Invention Grant
- Patent Title: Plasma activated conformal dielectric film deposition
- Patent Title (中): 等离子体激活的保形电介质膜沉积
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Application No.: US14133239Application Date: 2013-12-18
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Publication No.: US08999859B2Publication Date: 2015-04-07
- Inventor: Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart K. van Schravendijk , Andrew J. McKerrow
- Applicant: Novellus Systems, Inc.
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/31 ; H01L21/311 ; H01L21/469 ; H01L21/67 ; C23C16/04 ; C23C16/34 ; C23C16/40 ; C23C16/455 ; C23C16/56 ; H01L21/02 ; H01L21/768
Abstract:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Public/Granted literature
- US20140216337A1 PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION Public/Granted day:2014-08-07
Information query
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